4,73 €
Only 5 in stock
SKU: BUK555-60-2087291-ESWT
BUK555-60 Mosfet N-channel enhancement mode logic
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BUK555-60 Mosfet

GENERAL DESCRIPTION QUICK REFERENCE DATA
  • N-channel enhancement mode logic
  • SYMBOL PARAMETER MAX.
  • UNIT level field-effect power transistor in a plastic envelope.
  • VDS Drain-source voltage 60 V
  • The device is intended for use in ID Drain current (DC) 41 A
  • Automotive applications, Switched Ptot Total power dissipation 125 W
  • Mode Power Supplies (SMPS), Tj Junction temperature 175 °C motor control, welding, DC/DC and RDS(ON) Drain-source on-state 38 mW
  • AC/DC converters, and in general resistance;
  • VGS = 5 V purpose switching applications.