1,79 €
Only 15 in stock
SKU: SI4925BDY-MOU
SI4925BDY MOSFET
  • MOSFET, DOPPIO, PP, SO-8
  • Polarità transistor: Canale P
  • Continuous Drain Current Id: 5.3A
  • Drain Source Voltage Vds: 30 V
  • On Resistance Rds(on): 25mohm
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    SI4925BDY MOSFET

    Descrizione

    • MOSFET, DOPPIO, PP, SO-8
    • Polarità transistor: Canale P
    • Continuous Drain Current Id: 5.3A
    • Drain Source Voltage Vds: 30 V
    • On Resistance Rds(on): 25mohm
    • Rds(on) Test Voltage Vgs: -10V
    • Threshold Voltage Vgs Typ: -3V
    • Power Dissipation Pd: 1.1W
    • Operating Temperature Range: Da -55°C a +150°C
    • Transistor Case Style: SOIC
    • N. of Pins: 8
    • Corrente, Id max: -5.3A
    • Fall Time tf: 34ns
    • Junction Temperature Tj Max: 150°C
    • Junction Temperature Tj Min: -55°C
    • N. of Transistors: 2
    • On State Resistance @ Vgs = 4,5V: 41mohm
    • On State resistance @ Vgs = 10V: 25mohm
    • P Channel Gate Charge: 33nC
    • Package / Case: SOIC
    • Power Dissipation Pd: 1.1W
    • Power Dissipation Pd: 1.1W
    • Pulse Current Idm: 40A
    • Tempo di salita: 12ns
    • Tipo terminazione: SMD
    • Turn Off Time: 60ns
    • Turn On Time: 9ns
    • Voltage Vds Typ: -30 V
    • Voltage Vgs Max: -20V
    • Voltage Vgs Rds on Measurement: 4.5V