0,10 €
Out of Stock
SKU: 2N5401-XAR
2N5401 TRANSISTOR
  • Transistor Polarity:PNPCollector-to-Emitter Breakdown Voltage:150V
  • Typ Gain Bandwidth ft:400MHz
  • Power Dissipation Pd:625mW
  • DC Collector Current:0.6A
  • DC Current Gain hFE:60
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    2N5401 TRANSISTOR

    Descrizione
    • TRANSISTOR, PNP, TO-92
    • Transistor Polarity:PNP
    • Collector-to-Emitter Breakdown Voltage:150V
    • Typ Gain Bandwidth ft:400MHz
    • Power Dissipation Pd:625mW
    • DC Collector Current:0.6A
    • DC Current Gain hFE:60
    • Transistor Case Style:TO-92
    • No. of Pins:3
    • SVHC:Cobalt dichloride
    • Case Style:TO-92
    • Current Ic hFE:10mA
    • Device Marking:2N5401
    • Max Current Ic:0.6A
    • Max Current Ic Continuous a:0.6A
    • Max Power Dissipation Ptot:625mW
    • Max Voltage Vce Sat:-0.2V
    • Min Gain Bandwidth ft:100MHz
    • Min Hfe:60
    • No. of Transistors:1
    • Pin Configuration:b
    • Power Dissipation:625mW
    • Termination Type:Through Hole
    • Transistor Type:Bipolar
    • Voltage Vcbo:160V
    • SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)