0,43 €
In Stock
SKU: 2N6520RLRAGOSCT-ND
2N6520 Transistor
  • High Voltage Transistor
  • Collector-Emitter Voltage: VCBO= -350V
  • Collector Dissipation: PC (max)=625mW
  • Complement to 2N6517
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2N6520 Transistor

Type Designator: 2N6520
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92

Features

  • High Voltage Transistor
  • Collector-Emitter Voltage: VCBO= -350V
  • Collector Dissipation: PC (max)=625mW
  • Complement to 2N6517