6,41 €
Only 4 in stock
SKU: 2SB755-XAR
2SB755 Transistors
  • With TO-3P package
  • Complement to type2SD845
  • Hightransitionfrequency
  • Highbreakdownvoltage
  • VCEO=-150V(min)
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    2SB755 Transistors

    DESCRIPTION

    • With TO-3P package
    • Complement to type 2SD845
    • High transition frequency
    • High breakdown voltage :VCEO=-150V(min)

    APPLICATIONS

    • For power amplifier applications

    Absolute maximum ratings (Ta=25°)
    SYMBOL PARAMETER CONDITIONS VALUE UNIT
    VCBO Collector-base voltage Open emitter -150 V
    VCEO Collector-emitter voltage Open base -150 V
    VEBO Emitter-base voltage Open collector -5 V
    IC Collector current -12 A
    IB Base current -1.2 A
    PC Collectorl power dissipation TC=25ı 120 W
    Tj Junction temperature 150 ı
    Tstg Storage temperature -55~150 ı