2SA913 Transistor

2SA913 Silicon PNP Power Transistors

Type Designator: 2SA913
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 120 MHz
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO220

DESCRIPTION

• With TO-220 package
• Complement to type 2SC1913/1913A
• Large collector power dissipation
• High VCEO

APPLICATIONS

• Audio frequency high power driver