2N6027 Transistore Unigiunzione Programmabile, 1 A, 1.25 µA, 150 µA, TO-92, 3, 100 °C

2N5551 Transistor
Silicon, NPN, 310mW, 180V, 160V, 6V, 600mA, 135>C, 100MHz, 6, 80/250, MOT, TO92-2

2N5415 TRANSISTOR

• Collector-to-Emitter Breakdown Voltage:200V
• Transistor Case Style:TO-39
• Max Current Ic Continuous a:1A
• Max Voltage Vce Sat:2.5V
• Min Hfe:30; Power Dissipation:10W

2N5172 TRANSISTOR

• Transistor Polarity:N Channel
• Collector Emitter Voltage V(br)ceo:25V
• Power Dissipation Pd:625mW
• DC Collector Current:500mA
• DC Current Gain hFE:500
• Operating Temperature Range:-55°C to +1

2N5109 Transistor
RF & MICROWAVE DISCRETE