2N5415 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:200V

Transistor Case Style:TO-39

Max Current Ic Continuous a:1A

Max Voltage Vce Sat:2.5V

Min Hfe:30; Power Dissipation:10W

2N5551 Transistor
Silicon, NPN, 310mW, 180V, 160V, 6V, 600mA, 135>C, 100MHz, 6, 80/250, MOT, TO92-2

2N6027 Transistore Unigiunzione Programmabile, 1 A, 1.25 µA, 150 µA, TO-92, 3, 100 °C

2N6031 Transistor
PNP 140V 16A 200W TO-3

2N6073AG TRIAC

Peak Repetitive Off-State Voltage, Vdrm:400V

Current Igt:5mA

RMS Current It:4A

Holding Current:15mA

Voltage Vgt:2.5V

Peak Gate Power Pgm:10W

Operating Temperature Range:-40°C to +110°C