Fet

BSS125 Fet
SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 1.5 ...2.5 V

BSS89 Fet
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

J310 FET

• Breakdown Voltage Vbr:-25V
• Zero Gate Voltage Drain Current Idss:24mA to 60mA
• Gate-Source Cutoff Voltage Vgs(off) Max:6.5V
• Power Dissipation:350mW

MPF102 Fet

• N-CHANNEL RF AMPLIFIER
• Drain Source Voltage, Vds:15V
• Continuous Drain Current, Id:20mA
• Power Dissipation, Pd:350mW
• Operating Temperature Range:-55°C to +155°C