HGTP20N60A4 IGBT Transitor

3,93 €
Only 13 in stock
SKU: HGTP20N60A4-MFAT
HGTP20N60A4 IGBT Chip N-CH 600V 70A TO-220
  • Transistor Type:IGBT
  • Max Voltage Vce Sat:2.7V
  • Collector-to-Emitter Breakdown Voltage:600V
  • SVHC:Cobalt dichloride
  • Alternate Case Style:SOT-249
 Torna a: IGBT

HGTP20N60A4 IGBT Chip N-CH 600V 70A TO-220

Descrizione
  • IGBT, N, TO-220
  • Transistor Type: IGBT
  • DC Collector Current: 70A
  • Collector Emitter Voltage Vces: 2.7V
  • Power Dissipation Pd: 290W
  • Collector Emitter Voltage V(br)ceo: 600V
  • Transistor Case Style: TO-220AB
  • No. of Pins: 3
  • SVHC: No SVHC (20-Jun-2011)
  • Current Ic Continuous a Max: 70A
  • Current Temperature: 25°C
  • Fall Time tf: 32ns
  • Full Power Rating Temperature: 25°C
  • No. of Transistors: 1
  • Package / Case: TO-220AB
  • Pin Format: GCE
  • Power Dissipation Max: 290W
  • Power Dissipation Pd: 290W
  • Power Dissipation Pd: 290W
  • Power Dissipation Ptot Max: 290W
  • Pulsed Current Icm: 280A
  • Rise Time: 12ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 600V