2SB1375 Transistor PNP

2SB1375 Transistor

Type Designator: 2SB1375
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 4.5 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220