2SD2012 Transistor NPN
2SD2012-XAR

2SD2012 Transistor NPN

1,03 €
Only 16 in stock
SKU: 2SD2012-XAR
2SD2012 Transistor
Si-N NF-L 60V, 3A, 25W, 3MHz, B=100...320
 Torna a: Transistor

2SD2012 Transistor

Type Designator: 2SD2012
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO220

  • HIGH DC CURRENT GAIN
  • LOW SATURATION VOLTAGE
  • INSULATED PACKAGE FOR EASY MOUNTING

APPLICATIONS

  • GENERAL PURPOSE POWER AMPLIFIERS
  • GENERAL PURPOSE SWITCHING

DESCRIPTION
The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package.
It is inteded for