DTA143ES Transistor
Pre-Biased Digital Transistor
ROHM Electronics
npn transistors,pnp transistors,transistors
No. of Units Per Package=1
V(BR)CEO (V)=50
V(BR)CBO (V)=50
I(C) Abs.(A) Collector Current=100m
Absolute Max. Power Diss. (W)=300m
I(CBO) Max. (A)=500n
@V(CBO) (V) (Test Condition)=50
h(FE) Min. Static Current Gain=20
@I(C) (A) (Test Condition)=10m
@V(CE) (V) (Test Condition)=5.0
f(T) Min. (Hz) Transition Freq=250M
@I(C) (A) (Test Condition)=5.0m
@V(CE) (V) (Test Condition)=10
V(CE)sat Max.(V)=.30
@I(C) (A) (Test Condition)=5.0m
@I(B) (A) (Test Condition)=250u
RB (Ohms) Base input resistor.=47k
RBE (Ohms) Base-Emit. resistor=47k
Collector-Emitter Diode? Y/N=No
Semiconductor Material=Silicon
Structure NPN/PNP=PNP
Package=TO-92var
