Transistor

2N2219
TRANSISTOR

Polarità transistor:NPN

Collector-to-Emitter Breakdown Voltage:40V

Power Dissipation Pd:800mW

DC Collector Current:800mA

DC Current Gain hFE:20

Transistor Case Style:TO-39

2N2905 TRANSISTOR

Polarità transistor:PNP

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:200MHZ

Power Dissipation Pd:3mW

DC Collector Current:600mA

DC Current Gain hFE:100

2N3440 Transistor

Collector-to-Emitter Breakdown Voltage:250V

Typ Gain Bandwidth ft:15MHz

Av Current Ic:1 A

Tipo corpo:TO-39

2N3904 TRANSISTOR
Sostituisce: 2N4123 , 2N4124

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:300MHZ

Power Dissipation Pd:625mW

DC Collector Current:0.2A

DC Current Gain hFE:300

Opera

2N3906 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:250MHZ

Power Dissipation Pd:625mW

DC Collector Current:0.2A

DC Current Gain hFE:100

Operating Temperature Range:Da -55°C a +150°C