Polarità transistor:NPNCollector-to-Emitter Breakdown Voltage:40VPower Dissipation Pd:800mWDC Collector Current:800mADC Current Gain hFE:20Transistor Case Style:TO-39
Polarità transistor:PNPCollector-to-Emitter Breakdown Voltage:40VTyp Gain Bandwidth ft:200MHZPower Dissipation Pd:3mWDC Collector Current:600mADC Current Gain hFE:100
Collector-to-Emitter Breakdown Voltage:40VTyp Gain Bandwidth ft:250MHZPower Dissipation Pd:625mWDC Collector Current:0.2ADC Current Gain hFE:100Operating Temperature Range:Da -55°C a +150°C
