BB505B Variable Capacitance Diode
si-d vhf-tuning 1.8-2.5pf

BC107 TRANSISTOR

Polarità transistor:NPN; Collector-to-Emitter Breakdown Voltage:45 V; Power Dissipation Pd:0.3W; DC Collector Current:100mA; DC Current Gain hFE:120; Transistor Case Style:TO-18; Tipo corpo:TO-18; Max Current Ic Contin

BC107A Transistor

Polarità transistor:NPN

Collector-to-Emitter Breakdown Voltage:45 V

Typ Gain Bandwidth ft:150MHZ

Power Dissipation Pd:600mW

DC Collector Current:200mA

DC Current Gain hFE:110

Transistor Case Style

BC107B Transistor

Polarità transistor:NPN

Collector-to-Emitter Breakdown Voltage:45 V

Typ Gain Bandwidth ft:150MHZ

Power Dissipation Pd:600mW

DC Collector Current:200mA

DC Current Gain hFE:200

Transistor Cas

BC108B Transistor
si-n 30v 0.2a 0.3w