6,41 €
Only 4 in stock
SKU: 2SB755-MFAT
2SB755 Transistors
  • With TO-3P package
  • Complement to type2SD845
  • Hightransitionfrequency
  • Highbreakdownvoltage
  • VCEO=-150V(min)
 Back to: Transistor

2SB755 Transistors

DESCRIPTION

  • With TO-3P package
  • Complement to type 2SD845
  • High transition frequency
  • High breakdown voltage :VCEO=-150V(min)

APPLICATIONS

  • For power amplifier applications

Absolute maximum ratings (Ta=25°)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -150 V
VCEO Collector-emitter voltage Open base -150 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -12 A
IB Base current -1.2 A
PC Collectorl power dissipation TC=25ı 120 W
Tj Junction temperature 150 ı
Tstg Storage temperature -55~150 ı