3,21 €
Only 3 in stock
SKU: 2SK1117-MFAT
2SK1117 Mosfet
MOS-N-FET-e, V-MOS, 600V, 6A, 100W
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2SK1117 Mosfet N-Channel

In the vast landscape of electronic components dedicated to power management, the 2SK1117 Mosfet N-Channel represents a fundamental choice for engineers and designers seeking stable and reliable performance. Imagine having to manage the switching of high loads within a switched-mode power supply or a motor control system: this is where this field-effect transistor shows its true value. Thanks to its N-channel architecture, the 2SK1117 is able to offer low on-state resistance (Rds(on)) and remarkable switching speed, minimising energy losses and heat dissipation. For example, in the implementation of DC-DC conversion circuits, the use of this component makes it possible to maintain high levels of efficiency even at sustained operating frequencies. Its thermal robustness and ability to handle significant voltages and currents make it a valuable ally not only in the repair of audio and industrial equipment, but also in the development of new prototype solutions where precision and long-term durability are essential requirements.

Type Designator: 2SK1117
Type of Transistor: MOSFET
Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220AB