Fet

MPF102 Fet

N-CHANNEL RF AMPLIFIER

Drain Source Voltage, Vds:15V

Continuous Drain Current, Id:20mA

Power Dissipation, Pd:350mW

Operating Temperature Range:-55°C to +155°C

J310 FET

Breakdown Voltage Vbr:-25V

Zero Gate Voltage Drain Current Idss:24mA to 60mA

Gate-Source Cutoff Voltage Vgs(off) Max:6.5V

Power Dissipation:350mW

BSV80 FET

BSS89 Fet
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

BSS125 Fet
SIPMOS ® Small-Signal Transistor

N channel

Enhancement mode

Logic Level

VGS(th) = 1.5 ...2.5 V