5,76 €
Only 4 in stock
SKU: 2SK1213-MFAT
2SK1213 Mosfet
MOS-N-FET-e, V-MOS, 600V 6A 125W 40/85n
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2SK1213 Mosfet

In the vast landscape of semiconductor components, the 2SK1213 Mosfet stands out as a true benchmark for engineers and designers seeking reliability and thermal efficiency. Imagine having to manage power switching in a high-fidelity audio amplifier or a complex industrial power supply system: it is precisely in these critical scenarios that this N-channel field-effect transistor shows its superior value. Thanks to a low on-state resistance (Rds(on)) and reduced parasitic capacitances, the 2SK1213 makes it possible to minimise energy losses even at high operating frequencies, drastically reducing heat generation. For example, when upgrading DC motor control circuits, adopting this Mosfet guarantees a rapid dynamic response and extremely precise speed control, preserving the integrity of the entire system. Its robust internal structure not only ensures a long operating lifespan, but also offers remarkable tolerance to transient voltage spikes, making it the ideal choice for applications where long-term stability is non-negotiable.

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
tr ⓘ - Rise Time: 25 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO3PN