1,46 €
Only 14 in stock
SKU: IRF1010EP-MFAT
IRF1010N MOSFET
  • Max Voltage Vds:60V
  • On State Resistance:0.012ohm
  • Power Dissipation:170W
  • Transistor Case Style:TO-220AB
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IRF1010N MOSFET

Descrizione

  • MOSFET, N, 60V, 81A, TO-220
  • Transistor Polarity:N
  • Max Voltage Vds:60V
  • On State Resistance:0.012ohm
  • Power Dissipation:170W
  • Transistor Case Style:TO-220AB
  • No. of Pins:3
  • SVHC:No SVHC
  • Case Style:TO-220AB
  • Cont Current Id:81A
  • Current Temperature:25°C
  • Full Power Rating Temperature:25°C
  • Junction to Case Thermal Resistance A:0.9°C/W
  • Lead Spacing:2.54mm
  • No. of Transistors:1
  • On State resistance @ Vgs = 10V:0.012ohm
  • Pin Format:1 g
  • 2 d/tab
  • 3 s
  • Power Dissipation Pd:170W
  • Pulse Current Idm:330A
  • Termination Type:Through Hole
  • Transistor Type:MOSFET
  • Typ Voltage Vds:60V
  • Typ Voltage Vgs th:4V
  • Voltage Vgs Rds on Measurement:10V