1,46 €
Only 14 in stock
SKU: IRF1010EP-XAR
IRF1010N MOSFET
  • Max Voltage Vds:60V
  • On State Resistance:0.012ohm
  • Power Dissipation:170W
  • Transistor Case Style:TO-220AB
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    IRF1010N MOSFET

    Descrizione

    • MOSFET, N, 60V, 81A, TO-220
    • Transistor Polarity:N
    • Max Voltage Vds:60V
    • On State Resistance:0.012ohm
    • Power Dissipation:170W
    • Transistor Case Style:TO-220AB
    • No. of Pins:3
    • SVHC:No SVHC
    • Case Style:TO-220AB
    • Cont Current Id:81A
    • Current Temperature:25°C
    • Full Power Rating Temperature:25°C
    • Junction to Case Thermal Resistance A:0.9°C/W
    • Lead Spacing:2.54mm
    • No. of Transistors:1
    • On State resistance @ Vgs = 10V:0.012ohm
    • Pin Format:1 g
    • 2 d/tab
    • 3 s
    • Power Dissipation Pd:170W
    • Pulse Current Idm:330A
    • Termination Type:Through Hole
    • Transistor Type:MOSFET
    • Typ Voltage Vds:60V
    • Typ Voltage Vgs th:4V
    • Voltage Vgs Rds on Measurement:10V