2SA614 Transistor

2SA614 Transistor

Type Designator: 2SA614
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 180 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO66

DESCRIPTION

• Collector-Emitter Breakdown Voltage: V(BR)CEO= -55V (Min.)
• Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A
• Collector Power Dissipation: PC= 25W@ TC= 25℃

APPLICATIONS

• Designed for medium power amplifier applications.