2SB755 Transistor
6,41 €
Only 4 in stock
SKU: 2SB755-XAR
2SB755 TransistorsWith TO-3P package Complement to type2SD845 Hightransitionfrequency Highbreakdownvoltage VCEO=-150V(min)
2SB755 Transistors
DESCRIPTION
- With TO-3P package
- Complement to type 2SD845
- High transition frequency
- High breakdown voltage :VCEO=-150V(min)
APPLICATIONS
- For power amplifier applications
Absolute maximum ratings (Ta=25°)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -150 V
VCEO Collector-emitter voltage Open base -150 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -12 A
IB Base current -1.2 A
PC Collectorl power dissipation TC=25ı 120 W
Tj Junction temperature 150 ı
Tstg Storage temperature -55~150 ı



