2SJ306 Mosfet P-Channel

Imagine designing a high-fidelity audio amplifier or a precision switched-mode power supply and facing the dilemma of choosing the ideal components: this is where the 2SJ306 MOSFET comes into play, a P-channel field-effect transistor that has won the trust of many electronics engineers thanks to its reliability. This component stands out for its ability to handle high currents with minimal on-state resistance ($R_{DS(on)}$), drastically reducing energy losses in the form of heat. For example, in motor control circuits or complementary output stages, using the 2SJ306 allows for rapid and clean switching, minimising the electromagnetic interference (EMI) that often plagues more complex designs. Integrating it into your prototypes means not only improving the overall energy efficiency of the device, but also guaranteeing superior circuit longevity, making it an excellent choice for both DIY enthusiasts and industry professionals.

 

Type Designator: 2SJ306

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

|VGSoff|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220ML