BD232 Transistor

BD232 Transistor

 Type Designator: BD232
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 11 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO126

DESCRIPTION

• Good Linearity of hFE
• High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 300V(Min)

APPLICATIONS

• Designed for use in power output stages and line driver in TV receivers.