BD807 Transistor

BD807 Transistor

 Type Designator: BD807
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO220

• DC Current Gain -: hFE= 30(Min.)@IC=2A
• Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
• Complement to Type BD808 APPLICATIONS
• Designed for use in high poweraudio amplifiers utilizingcomplementary or quasi complementary circuits.