BFQ162 Transistor

BFQ162 Transistor

Type Designator: BFQ162
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO128

• Pre-stage driver in high-resolution colour graphics monitors.