BUT12AF Transistor

BUT12AF Transistor

Type Designator: BUT12AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 23 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT186

Sostituisce: F313P , F313P