Transistor

2N3906 TRANSISTOR

• Collector-to-Emitter Breakdown Voltage:40V
• Typ Gain Bandwidth ft:250MHZ
• Power Dissipation Pd:625mW
• DC Collector Current:0.2A
• DC Current Gain hFE:100
• Operating Temperature Range:Da -55°C a +150°C

2N3963 Transistor
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

2N4401 TRANSISTOR
Sostituisce: 2N4400 , 2SC2925

2N5087 Transistor
PNP General Purpose Amplifier

2N5109 Transistor
RF & MICROWAVE DISCRETE