KRA104M Transistor

KRA104M - EPITAXIAL PLANAR PNP TRANSISTOR

Type Designator: KRA104M
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO-92M

Datasheet.pdf

SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

• With Built-in Bias Resistors.
• Simplify Circuit Design.
• Reduce a Quantity of Parts and Manufacturing Process.