S2000AF Transistor

S2000AF Transistor

• TRANSISTOR, NPN ISOWATT-218
• Polarità transistor:NPN
• Collector-to-Emitter Breakdown Voltage:700V
• Typ Gain Bandwidth ft:7MHz
• N. of Pins:3
• Av Current Ic:8A
• Tipo corpo:ISOWATT-218
• Current Ic @ Vce Sat:8A
• Corrente, Ic hFE:4.5A
• Full Power Rating Temperature:25°C
• Isolation voltage:1500 V
• Lead Spacing:5.45mm
• Max Current Ic:15mA
• Max Current Ic Continuous a:8A
• Max Power Dissipation Ptot:50 W
• Max Voltage Vce Sat:1V
• Min Hfe:4
• N. of Transistors:1
• Tipo transistor:Commutazione di potenza ad alta tensione
• Tensione, Vcbo:1500 V
• Voltage Vces:1500 V