2SD1273 Transistor

2SD1273 Transistor

Type Designator: 2SD1273
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO220

For power amplification with high forward current transfer ratio

Complementary to 2SB1299

Features

• High foward current transfer ratio hFE
• Satisfactory linearity of foward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw