4,64 €
Only 3 in stock
SKU: 2SK1221-MFAT
2SK1221 Mosfet
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2SK1221 Mosfet

In the landscape of electronic components dedicated to power management, the 2SK1221 MOSFET stands out as a highly reliable metal-oxide-semiconductor field-effect transistor, specifically designed for high-speed switching applications and signal amplification. Imagine having to design a high-efficiency switching power supply or a direct current motor control system: in these critical scenarios, using a device like the 2SK1221 makes it possible to drastically reduce thermal energy losses thanks to its low on-state resistance ($R_{DS(on)}$). A classic example of its implementation can be seen in DC-DC conversion circuits, where the ability to handle high voltages and currents without suffering excessive thermal stress guarantees the long-term stability of the entire system. Electronic engineers particularly appreciate this component for its robustness and the ease with which it interfaces with microcontroller driver circuits, making it an ideal choice both in advanced prototyping and in the industrial production of power devices.

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB