MMBT3904,215 Transistor

Transistor Polarity:NPN

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:300MHz

Power Dissipation Pd:250mW

DC Collector Current:200mA

DC Current Gain hFE:100

MMBT3906LT1G Tranistor
PNP; bipolare; 40V; SOT23

MMBZ5234B Diodo Zener Singolo
6.2 V, 350 mW, SOT-23, 5 %, 3, 150 °C

MN1220T EEPROM 64*10us

RMN15261PDU IC

MOC3023 Optotriac; 5kV; Uusc:400V; DIP6; Canali:1

MOC3041 optocoupler

Modulo batteria 5KW Huawei Luna2000

Modulo batteria DYNESS 3.55 kWh

Modulo batteria FoxESS 2.5kWh MIRA HV25

Modulo di controllo della banca energetica Luna2000

Modulo di controllo DYNESS TOWER PRO-BDU?BASE

Modulo Huawei Dongle 4G

Morsettiera di collegamento Filo-Scheda, 5.08 mm, 2 Vie, 26 AWG, 14 AWG, 2.5 mm², Vite

Morsettiere di parallelo MC4 EVO2

MOT400 - cd pin motor 8mm
Sostituisce: CDM01 , PEA1233

MOT401 - cd pin motor 14mm
Sostituisce: CDM04

MOT402 - cd pin motor 22.5mm
Sostituisce: CDM02 , RF310T11400

MOTOR 12V CCW K2136
Anti-clockwise with speed adjustment

MP8706 IC
High Efficiency 3A, 16V, 500KHz Synchronous Step-down Converter

MPF102 Fet

N-CHANNEL RF AMPLIFIER

Drain Source Voltage, Vds:15V

Continuous Drain Current, Id:20mA

Power Dissipation, Pd:350mW

Operating Temperature Range:-55°C to +155°C

MPS2369 Transistor
Switching Transistors

MPS8099 Transistor
BJT 500mA 80V NPN

MPSA18 TRANSISTOR

Polarità transistor:NPN

Collector Emitter Voltage V(br)ceo:45 V

Gain Bandwidth ft Typ:100MHz

Power Dissipation Pd:625mW

DC Collector Current:100mA

Transistor Case Style:TO-92

MPSA42 TRANSISTOR
si-n vid.300v 0.5a 0.625w