IRF450 Mosfet N-Channel

IRF450 N-Channel MOSFET

The main technical specifications of the IRF450 N-Channel MOSFET (in a TO-3 package) are as follows:

• Transistor type: N-channel MOSFET
• Drain-Source voltage (VDS): 500 V
• Continuous drain current (ID): 13 A (@ TC = 25°C)
• Static drain-source on-resistance (RDS(on)): 0.40 ohm (typical)
• Power dissipation (PD): 150 W
• Gate-Source voltage (VGS): +- 20 V
• Gate charge (Qg): 90 nC (typical)
• Operating junction temperature range (Tj): -55°C to +150°C
• Package: TO-203AA (known as TO-3)