Fairchild Semiconductor

HGTP20N60A4 IGBT Chip N-CH 600V 70A TO-220

Transistor Type:IGBT

Max Voltage Vce Sat:2.7V

Collector-to-Emitter Breakdown Voltage:600V

SVHC:Cobalt dichloride

Alternate Case Style:SOT-249

HUF75339P3
N-MOSFET; unipolare; 55V; 75A; 200W; TO220AB

IRF540 MOSFET

Max Current Id:28A

Max Voltage Vds:100V

On State Resistance:0.052ohm

Rds Measurement Voltage:10V

Power Dissipation:107W

Operating Temperature Range:-55ºC to +175ºC

IRFZ24 MOSFET

Transistor Polarity:N Channel

Continuous Drain Current, Id:17A

Drain Source Voltage, Vds:55V

On Resistance, Rds(on):0.1ohm

Rds(on) Test Voltage, Vgs:10V

Threshold Voltage, Vgs Typ:4V

J310 FET

Breakdown Voltage Vbr:-25V

Zero Gate Voltage Drain Current Idss:24mA to 60mA

Gate-Source Cutoff Voltage Vgs(off) Max:6.5V

Power Dissipation:350mW