MJ15001G Transistor
13,80 €
In Stock
SKU: MJ15001GOS-ND
MJ15001G Transistor
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:200mW; DC Collector Current:15A; DC Current Gain hFE:25; Operating Temperature Range:-65°C to +200°C
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Power Dissipation Pd:200mW; DC Collector Current:15A; DC Current Gain hFE:25; Operating Temperature Range:-65°C to +200°C
MJ15001G Transistor
- Descrizione
- BIPOLAR
- Transistor Polarity:NPN
- Collector Emitter Voltage V(br)ceo:140V
- Power Dissipation Pd:200mW
- DC Collector Current:15A
- DC Current Gain hFE:25
- Operating Temperature Range:-65°C to +200°C
- Transistor Case Style:TO-204
- No. of Pins:2
- SVHC:No SVHC (15-Dec-2010)
- Collector Emitter Voltage Vces:1V
- Current Ic Continuous a Max:15A
- Gain Bandwidth ft Typ:2MHz
- Hfe Min:25
- Package / Case:TO-204
- Power Dissipation Pd:200mW
- Termination Type:Through Hole
