2SK3561 Mosfet
Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)

2SK3565 Mosfet
N-MOSFET; unipolar; 900V; 5A; 45W; TO220FP

2SK3566 MOSFET

• Max Current Id:2.5A
• Max Voltage Vds:900 V
• Resistenza in stato di conduzione:6,4ohm
• Rds Measurement Voltage:10V
• Max Voltage Vgs:30 V
• Dissipazione di potenza:40 W
• Transistor Case Style:TO-220SIS

The 2SK3568 is an advanced N-channel power MOSFET transistor, commonly manufactured by Toshiba. It is specifically designed for high-voltage and high-speed switching applications.

2SK3569 Mosfet
600V 10A Rdson 0.75 Ohm