BD677 TRANSISTOR

• Transistor Polarity:NPN
• Collector-to-Emitter Breakdown Voltage:60V
• Operating Temperature Range:-65°C to +150°C
• Case Style:SOT-32
• Max Current Ic Continuous a:4A
• Max Voltage Vce Sat:2.8V

BD679 Transistor

• Collector-to-Emitter Breakdown Voltage:60V
• Power Dissipation Pd:40 W
• DC Collector Current:4A
• DC Current Gain hFE:750

BD683 Transistor
The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications.
PNP complement is BD684

BD807 Transistor
Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

BD810 Transistor
Sostituisce: BD544 , BD806 , BD808