SI4925BDY Mosfet

SI4925BDY MOSFET

Descrizione

• MOSFET, DOPPIO, PP, SO-8
• Polarità transistor: Canale P
• Continuous Drain Current Id: 5.3A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 1.1W
• Operating Temperature Range: Da -55°C a +150°C
• Transistor Case Style: SOIC
• N. of Pins: 8
• Corrente, Id max: -5.3A
• Fall Time tf: 34ns
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• N. of Transistors: 2
• On State Resistance @ Vgs = 4,5V: 41mohm
• On State resistance @ Vgs = 10V: 25mohm
• P Channel Gate Charge: 33nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.1W
• Power Dissipation Pd: 1.1W
• Pulse Current Idm: 40A
• Tempo di salita: 12ns
• Tipo terminazione: SMD
• Turn Off Time: 60ns
• Turn On Time: 9ns
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -20V
• Voltage Vgs Rds on Measurement: 4.5V