BD679 Transistor

Collector-to-Emitter Breakdown Voltage:60V

Power Dissipation Pd:40 W

DC Collector Current:4A

DC Current Gain hFE:750

BD678 Transistor
Sostituisce: BD676 , BD678A , MJE700 , 2SA1194

BD677 TRANSISTOR

Transistor Polarity:NPN

Collector-to-Emitter Breakdown Voltage:60V

Operating Temperature Range:-65°C to +150°C

Case Style:SOT-32

Max Current Ic Continuous a:4A

Max Voltage Vce Sat:2.8V

BD535 Transistor
Sostituisce: BD203 , BD207 , BD222 , BD293 , BDY81

BD439 Transistor

Transistor Polarity:NPN

Collector-to-Emitter Breakdown Voltage:60V

Typ Gain Bandwidth ft:3MHz

Power Dissipation Pd:36W

DC Collector Current:4A

DC Current Gain hFE:140