BDX33C Transistor
Type Designator: BDX33C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO220
DESCRIPTION
The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors inmonolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intentedfor use in power linear and switching applications.The complementary PNP types are BDX34B and
BDX34C respectively.
