2N6027 Transistore Unigiunzione Programmabile, 1 A, 1.25 µA, 150 µA, TO-92, 3, 100 °C

2N5551 Transistor
Silicon, NPN, 310mW, 180V, 160V, 6V, 600mA, 135>C, 100MHz, 6, 80/250, MOT, TO92-2

2N5415 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:200V

Transistor Case Style:TO-39

Max Current Ic Continuous a:1A

Max Voltage Vce Sat:2.5V

Min Hfe:30; Power Dissipation:10W

2N5401 TRANSISTOR

Transistor Polarity:PNPCollector-to-Emitter Breakdown Voltage:150V

Typ Gain Bandwidth ft:400MHz

Power Dissipation Pd:625mW

DC Collector Current:0.6A

DC Current Gain hFE:60

2N5172 TRANSISTOR

Transistor Polarity:N Channel

Collector Emitter Voltage V(br)ceo:25V

Power Dissipation Pd:625mW

DC Collector Current:500mA

DC Current Gain hFE:500

Operating Temperature Range:-55°C to +1

2N5109 Transistor
RF & MICROWAVE DISCRETE

2N5087 Transistor
PNP General Purpose Amplifier

2N4401 TRANSISTOR
Sostituisce: 2N4400 , 2SC2925

2N3963 Transistor
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

2N3906 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:250MHZ

Power Dissipation Pd:625mW

DC Collector Current:0.2A

DC Current Gain hFE:100

Operating Temperature Range:Da -55°C a +150°C

2N3906 TRANSISTOR

BIPOLAR TRANSISTOR, PNP, -40V TO-92

Collector Emitter Voltage, V(br)ceo:40V

Transition Frequency Typ, ft:250MHz

Power Dissipation, Pd:625mW

2N3904 TRANSISTOR
Sostituisce: 2N4123 , 2N4124

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:300MHZ

Power Dissipation Pd:625mW

DC Collector Current:0.2A

DC Current Gain hFE:300

Opera

2N3866 Transistor NPN, 800MHZ, 30V, TO39

2N3819 FET-N
Questo dispositivo è stato progettato per applicazioni RF e amplificatore mixer di esercizio fino a 450 MHz, e per la commutazione analogico che richiedono bassa capacità.

2N3440 Transistor

Collector-to-Emitter Breakdown Voltage:250V

Typ Gain Bandwidth ft:15MHz

Av Current Ic:1 A

Tipo corpo:TO-39

2N3055 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:60V

Typ Gain Bandwidth ft:2.5MHz

Max Current Ic Continuous a:15A

Tipo corpo:TO-3

2N2907 Transistor
Progettato per l'alta velocità di commutazione e l'applicazione di uso generale.

2N2905 TRANSISTOR

Polarità transistor:PNP

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:200MHZ

Power Dissipation Pd:3mW

DC Collector Current:600mA

DC Current Gain hFE:100

2N2857 Tranistor NPN
Equivalent to 2SC1254

2N2484 Transistor
NPN; bipolare; 60V; 50mA; 0,36/1,2W; TO18; 10dB

2N2369A Transistor
NPN bipolare
40V 200mA 360mW TO18

2N2243A Transistor
Transistor bipolari - BJT NPN AMPL/SWITCH Small Signal

2N2222A TRANSISTOR NPN TO-18

2N2219
TRANSISTOR

Polarità transistor:NPN

Collector-to-Emitter Breakdown Voltage:40V

Power Dissipation Pd:800mW

DC Collector Current:800mA

DC Current Gain hFE:20

Transistor Case Style:TO-39

2N1711
Transistor Singolo Bipolare (BJT), NPN, 50 V, 70 MHz, 3 W, 500 mA, 35