2SK2035 Mosfet
High Speed Switching ApplicationsAnalog Switching Applications

2SK192A FET
N-FET

2SK170 FET
N-FET 40V 20mA 0.4W

2SK1531 Mosfet
Vdss 500V Vgss±30V Dc 15A

2SK1507 Mosfet

2SK1492 MOSFET
Features

Low on-state resistance RDS(on) = 0.1 Ω MAX. (VGS = 10 V, ID = 18 A)

Low input capacitance Ciss = 3000 pF TYP.

Built-in G-S gate protection diodes

2SK1377 Mosfet

2SK1294 Mosfet

2SK1221 Mosfet

2SK1213 Mosfet
MOS-N-FET-e, V-MOS, 600V 6A 125W 40/85n

2SK1120 Mosfet

Max Current Id:8A

Max Voltage Vds:1000 V

Resistenza in stato di conduzione:1,8ohm

Rds Measurement Voltage:10V

Max Voltage Vgs:20V

Dissipazione di potenza:150 W

Transistor Case Style:TO-3P

2SK1117 Mosfet
MOS-N-FET-e, V-MOS, 600V, 6A, 100W

2SJ306 Mosfet
MOS-P-FET-e, V-MOS, 250V, 3A, 70W,

2SJ162 Mosfet
MOS-P-FET-e, V-MOS, 160V, 7A, 100W 230/110ns

2SD966 Transistor
Si-N NF, 40V, 5A, 1W 150MHz

2SD965 Transistor
For low-frequency power amplification

2SD882 Transistor
The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices.
The complementary PNP type is 2SB772.

2SD880 Transistor
LOW FREQUENCY POWER AMPLIFIER
Substitute: 2SC790

2SD845 Transistors

With MT-200 package

Complement to type 2SB755

High transition frequency

High breakdown voltage

VCEO=150V(min)

2SD756A Tranistor
Low frequency high voltage amplifier

2SD755 Transistor
Low frequency high voltage amplifier
Complementary pair with 2SB715, 2SB716 and 2SB716A

2SD718Transistor
si-n 120v 8a 80w af-power
Sostituisce: 2SC1617 , 2SD428 , 2SD587

2SD716 NPN Silicon Power Transistors
Power amplifier applications
omplementary to 2SB686
Recommended for 30~30W high-fidelity frequency amplifier output stage

2SD669 Transistor
Si-N NF/Vid-L, 180V, 1.5A, 140MHz

2SD667 Transistor
Si-N Uni, 120V, 1A, 140MHz
Complementary pair with 2SB647/A