2SA1264 Transistor
SI-P 120V 8A 80W 30MHz
Sostituisce: 2SA1263N , 2SA1264N
Complementare a 2SC3181

2SA1263 TransistorComplementary to 2SC3180

2SA1249 Transistor
si-p 180v 1.5a 10w 120mhz
Tipo corpo:TO-126

2SA1244 Transistor
SI-P NF/S-L lo-sat 60V 5A 20W 60MHz

2SA1220 Transistors
2SA1220 = 2SA1184
DESCRIPTION

With TO-126 package

High transition frequency

Low collector saturation voltage

2SA1215 Transistor

case MT-220

Silicon PNP

MHz: 50 MHz

Amps: 15A

Volts: 160V

2SA1186 Transistor
For audio and general purpose amplifier applications
>Equivalente a 2SA1146

2SA1169 Transistor
For audio and general purpose amplifier applications

2SA1146 Transistor
For audio and general purposeamplifier applications

Equivalente a 2SA1186, 2SA1093

2SA1145 Transistor SI-P
Sostituisce: 2SA 818
Audio Frequency Amplifier Applications

Complementary to 2SC2705.

Small Collector Output Capacitance: Cob = 2.5 pF (typ.)

High Transition Frequency: fT = 200 MHz (typ.)

2SA1142 Transistor
Audio frequency power amplifier

2SA1124 Transistor For low-frequency high breakdown voltage amplificationComplementary to 2SC2632

2SA1123 Transistor SI-P 150V 0.05A 0.75W UNI
For low-frequency high breakdown voltage amplificationComplementary to 2SC2631
Sostituisce: 2SA912

2SA1111 Transistor
SI-P NF/S-L 150V 1A 20W 200MHz
sostituisce: 2SB628

2SA1106 Transistor
AUDIO POWER AMPLIFIER
Complementary to 2SC2581

2SA1104 Transistor
si-p nf/s-l 120v 8a 80w

2SA1095 Transistor
Sostituisce: 2SA1076 , 2SA1075 , 2SA1108, SA1389
DESCRIPTION

• With MT-200 package
• Complement to type 2SC2565
• High breakdown voltage
• High transition frequency

2SA1075 Transistor
Descrizione

• With MT-200 package
• Complement to type 2SC2525, 2SC2526
• Fast switching speed
• Excellent safe operating area

2SA1048 Transistor
Audio Frequency Amplifier Applications
Complementare 2SC2458

2SA104 Transistor Ge PNP Drift

2SA1016 Transistor
Uni, 120V, 0.05A, 0.4W, 110 MHz= 2SA970

2SA1015 Transistor
SI-P Uni 50V 0,15A 0,4W >80MHz
complementare 2SC1815.

2SA1013 Transistor
SI-P CTV-NF/VA 160V 1A 0,9W >150MHz
Complementare 2SC2383

SA1012 Transistor
SI-P NF/S-L 30V 3A 10W >100MHz
Complementare 2SC2562

2SA1011 Transistor
High-Voltage Switching, AF Power Amp,100W Output Predriver Applications

2SA1006 Transistor
complementari 2SC2336, 2SC2336A, 2SC2336B

2N7002E Mosfet
Nch MOSFET 60V 0.3A RDS(on)=3ohms SOT-23

2N6520 Transistor

• High Voltage Transistor
• Collector-Emitter Voltage: VCBO= -350V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6517

2N6517 Transistor

High Voltage Transistor

Collector Dissipation: PC(max) = 625mW

Complement to 2N6520

2N6509G THYRISTOR

Peak Repetitive Off-State Voltage, Vdrm:800V

Current Igt:40mA

Av Current It:16A

RMS Current It:25A

Voltage Vgt:1.5V

No. of Pins:3

SVHC:No SVHC

Case Style:TO-220

2N6491G Transistor
SI-P NF/S-L 90V 15A 75W >5MHz

2N6488G Transistor
SI-N NF/S-L 90V 15A 75W >5MHz

2N6476 Transistor
PNP, 4A, 120V, TO220

2N6075 TRIAC

Peak Repetitive Off-State Voltage, Vdrm:600V

Current Igt:5mA

RMS Current It:4A

Voltage Vgt:2.5V

SVHC:No SVHC

Case Style:TO-126

Current Itsm:30A

Current Itsm @ 60Hz:30A

2N6073AG TRIAC

Peak Repetitive Off-State Voltage, Vdrm:400V

Current Igt:5mA

RMS Current It:4A

Holding Current:15mA

Voltage Vgt:2.5V

Peak Gate Power Pgm:10W

Operating Temperature Range:-40°C to +110°C

2N6031 Transistor
PNP 140V 16A 200W TO-3

2N6027 Transistore Unigiunzione Programmabile, 1 A, 1.25 µA, 150 µA, TO-92, 3, 100 °C

2N5551 Transistor
Silicon, NPN, 310mW, 180V, 160V, 6V, 600mA, 135>C, 100MHz, 6, 80/250, MOT, TO92-2

2N5415 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:200V

Transistor Case Style:TO-39

Max Current Ic Continuous a:1A

Max Voltage Vce Sat:2.5V

Min Hfe:30; Power Dissipation:10W

2N5401 TRANSISTOR

Transistor Polarity:PNPCollector-to-Emitter Breakdown Voltage:150V

Typ Gain Bandwidth ft:400MHz

Power Dissipation Pd:625mW

DC Collector Current:0.6A

DC Current Gain hFE:60

2N5172 TRANSISTOR

Transistor Polarity:N Channel

Collector Emitter Voltage V(br)ceo:25V

Power Dissipation Pd:625mW

DC Collector Current:500mA

DC Current Gain hFE:500

Operating Temperature Range:-55°C to +1

2N5109 Transistor
RF & MICROWAVE DISCRETE

2N5087 Transistor
PNP General Purpose Amplifier

2N4401 TRANSISTOR
Sostituisce: 2N4400 , 2SC2925

2N3963 Transistor
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

2N3906 TRANSISTOR

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:250MHZ

Power Dissipation Pd:625mW

DC Collector Current:0.2A

DC Current Gain hFE:100

Operating Temperature Range:Da -55°C a +150°C

2N3906 TRANSISTOR

BIPOLAR TRANSISTOR, PNP, -40V TO-92

Collector Emitter Voltage, V(br)ceo:40V

Transition Frequency Typ, ft:250MHz

Power Dissipation, Pd:625mW

2N3904 TRANSISTOR
Sostituisce: 2N4123 , 2N4124

Collector-to-Emitter Breakdown Voltage:40V

Typ Gain Bandwidth ft:300MHZ

Power Dissipation Pd:625mW

DC Collector Current:0.2A

DC Current Gain hFE:300

Opera

2N3866 Transistor NPN, 800MHZ, 30V, TO39

2N3819 FET-N
Questo dispositivo è stato progettato per applicazioni RF e amplificatore mixer di esercizio fino a 450 MHz, e per la commutazione analogico che richiedono bassa capacità.